Highly repeatable performance and efficiency in semiconductor manufacturing with 3M™ Trizact™ CMP Pads.
The pressure is on to deliver performance and cost-effective consistency to the chemical mechanical planarization (CMP) process in semiconductor manufacturing. Demand to continually increase yield leaves no room for variation in a fab's production that risks waste or device reliability. Rather than choosing between higher planarization efficiency and better defect performance, choose both. Looking to match with a diamond pad conditioner? Skip it altogether. Choose to redefine your CMP process with 3M™ Trizact™ CMP Pads.
Let’s work together. Contact us with your latest process challenges and receive direct support from a dedicated team of technical experts. Then enjoy local sampling and product iterations thanks to global laboratory and manufacturing capabilities.
At the heart of each 3M™ Trizact™ CMP Pad is microreplication — a core 3M technology platform that allows us to precisely sculpt durable, microscopic 3D features onto the pad surface.
This highly controlled and tunable process arranges asperities and pores into independent unit cells to enable uniform polishing and pressure across the wafer, ideal for advanced nodes. After more than 1000 wafer runs, 3M microreplicated pads maintained their dimensional integrity — showing more than 15X less wear than a conventional pad [1, p. 6].
Microreplicated CMP pads from 3M demonstrated very consistent wafer-to-wafer stability, repeatability and uniformity over at least 2000 wafer passes, as measured by lower levels of within-die nonuniformity (WIDNU), than conventional pads [1, p. 5]. In testing, 3M™ Trizact™ CMP Pads had more than 30% reduced gate height WIDNU and more than 40% reduced top-of-gate dielectric thickness WIDNU.
Source: [1] A Microreplicated Pad for Tungsten Chemical-Mechanical Planarization
3M™ Trizact™ CMP Pads planarize quickly, precisely and evenly. Where a conventional pad might need to deposit a thick, inefficient oxide layer of more than 2000 angstrom (Å) over a silicon nitride layer to allow leeway for imprecise planarization, 3M pads need only 65% that amount. This saves on both oxide deposition and the slurry used for the CMP process. Plus, less material to remove means less time spent polishing. Testing demonstrated a more than 50% reduction in the time needed to remove an oxide layer compared to a conventional diamond grit pad.
Our broad lineup of 3M™ CMP Pad Conditioners address process needs across different applications, from the microreplicated consistency of 3M™ Trizact™ Pad Conditioners for advanced nodes, to diamond disks and economical soft brushes for legacy nodes.
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