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  3. Electronics Materials & Components
  4. CMP Materials
  5. CMP Pads

3M CMP Padsfor Semiconductor

Close-up of 3M™ Trizact™ CMP Pad with groove design
Redefining CMP pads

Highly repeatable performance and efficiency in semiconductor manufacturing with 3M™ Trizact™ CMP Pads.

CONNECT WITH AN EXPERT

Deliver predictable, stable, consistent performance to your chemical mechanical planarization (CMP) process — every time

The pressure is on to deliver performance and cost-effective consistency to the chemical mechanical planarization (CMP) process in semiconductor manufacturing. Demand to continually increase yield leaves no room for variation in a fab's production that risks waste or device reliability. Rather than choosing between higher planarization efficiency and better defect performance, choose both. Looking to match with a diamond pad conditioner? Skip it altogether. Choose to redefine your CMP process with 3M™ Trizact™ CMP Pads.​

Let’s work together. Contact us with your latest process challenges and receive direct support from a dedicated team of technical experts. Then enjoy local sampling and product iterations thanks to global laboratory and manufacturing capabilities.​

  • Highly precise 3D microreplicated asperities on the 3M™ Trizact™ CMP Pad

    Advanced performance for your advanced nodes

    At the heart of each 3M™ Trizact™ CMP Pad is microreplication — a core 3M technology platform that allows us to precisely sculpt durable, microscopic 3D features onto the pad surface.​

    This highly controlled and tunable process arranges asperities and pores into independent unit cells to enable uniform polishing and pressure across the wafer, ideal for advanced nodes.​ After more than 1000 wafer runs, 3M microreplicated pads maintained their dimensional integrity — showing more than 15X less wear than a conventional pad [1, p. 6].


  • Increased polishing uniformity

    Microreplicated CMP pads from 3M demonstrated very consistent wafer-to-wafer stability, repeatability and uniformity over at least 2000 wafer passes, as measured by lower levels of within-die nonuniformity (WIDNU), than conventional pads [1, p. 5]. In testing, 3M™ Trizact™ CMP Pads had more than 30% reduced gate height WIDNU and more than 40% reduced top-of-gate dielectric thickness WIDNU.

    Source: [1] A Microreplicated Pad for Tungsten Chemical-Mechanical Planarization

  • A chart demonstrating consistent wafter-to-wafer stability, repeatability and uniformity of wafers using microreplicated CMP pads from 3M

  • Illustration showing oxide layer depth needed with 3M™ Trizact™ CMP Pad and time required to remove oxide layer compared to conventional pads.
  • Faster, more precise planarization​

    3M™ Trizact™ CMP Pads planarize quickly, precisely and evenly. Where a conventional pad might need to deposit a thick, inefficient oxide layer of more than 2000 angstrom (Å) over a silicon nitride layer to allow leeway for imprecise planarization, 3M pads need only 65% that amount. This saves on both oxide deposition and the slurry used for the CMP process. Plus, less material to remove means less time spent polishing. Testing demonstrated a more than 50% reduction in the time needed to remove an oxide layer compared to a conventional diamond grit pad.


Need a pad conditioner instead? 3M can help.

Our broad lineup of 3M™ CMP Pad Conditioners address process needs across different applications, from the microreplicated consistency of 3M™ Trizact™ Pad Conditioners for advanced nodes, to diamond disks and economical soft brushes for legacy nodes.

  • FIND A PAD CONDITIONER

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3M™ Trizact™ CMP Pad photo

3M™ Trizact™ CMP Pad

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