3M™ Cluster Carbon

3M ID B49000161
  • 3M™ Cluster Boron is also available and is a suitable doping material for ion beam applications.
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  • 3M™ Cluster Boron is also available and is a suitable doping material for ion beam applications.

3M™ Cluster Carbon can be used to inhibit diffusion of boron implants for formation of PMOS transistors as well as inhibiting phosphorus diffusion in NMOS transistors.

3M™ Cluster Carbon chemicals (C16H10 and C14H14) can be used to inhibit diffusion of boron implants for formation of PMOS transistors as well as inhibiting phosphorus diffusion in NMOS transistors. 3M cluster chemicals may be used in pre-amorphization implant (PAI) processes as a replacement for difficult and expensive Ge implant. Implant of these materials into the source/drain region of the transistor to form silicon carbide species that mechanically stress the transistor channel and results in increased carrier mobility (stress engineering).