3M™ Cluster Boron

3M ID B49000160
  • 3M™ Cluster Carbon is also available for ion implant applications to limit boron diffusion.
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  • 3M™ Cluster Carbon is also available for ion implant applications to limit boron diffusion.

Enabling ultra low energy, high dose ion implantation, 3M™ Cluster Boron is a suitable doping material for ion beam applications.

Enabling ultra low energy, high dose ion implantation, 3M™ Cluster Boron is a suitable doping material for ion beam applications. 3M cluster boron is a solid form of B18H22, which, when delivered by our vapor delivery system, enables high dose implantation at energies as low as 200 eV. The B18H22 offers shallow boron implants beneficial as nodes get smaller.